mrf3866, r1, r2 mrf3866g, r1, r2 advanced power technology reserves the right to change, wi thout notice, the specifications and information contained herein visit our website at www.advancedpower.com or contact our factory direct. rev a 9/2005 * g denotes rohs compliant, pb free terminal finish r1 suffix?tape and reel, 500 units r2 suffix?tape and reel, 2500 units description: designed for general-purpose rf amplifier applications, such as; pre-drivers, oscillators, etc. absolute maximum ratings (tcase = 25 c) symbol parameter value unit v ceo collector-emitter voltage 30 vdc v cbo collector-base voltage 55 vdc v ebo emitter-base voltage 3.5 vdc i c collector current 400 ma thermal data p d total device dissipation @ tc = 25oc derate above 25oc 1.0 8 watts mw/ o c so-8 features low cost so-8 plastic surface mount package. s-parameter characterization tape and reel packaging options available maximum available gain = 17 db @ 300 mhz rf & microwave discrete low power transistors 140 commerce drive montgomeryville, pa 18936-1013 phone: (215) 631-9840 fax: (215) 631-9855
mrf3866, r1, r2 mrf3866g, r1, r2 advanced power technology reserves the right to change, wi thout notice, the specifications and information contained herein visit our website at www.advancedpower.com or contact our factory direct. rev a 9/2005 electrical specifications (tcase = 25 c) static (off) value symbol test conditions min. typ. max. unit bvcer collector-emitter breakdown voltage (ic = 5.0 madc, ib = 0, rbe = 10 ohms) 55 - - vdc bvcbo collector-base breakdown voltage (ic = 0.1 madc, ie = 0) 55 - - vdc bvebo emitter-base breakdown voltage (ie = 0.1 madc, ic = 0) 3.5 - - vdc iceo collector cutoff current (vce = 15 vdc, vbe = 0 vdc) - - .02 ma (on) hfe dc current gain (ic = 360 madc, vce = 5.0 vdc) (ic = 50 madc, vce = 5.0 vdc) 5.0 10 - - 250 200 dynamic value symbol test conditions min. typ. max. unit cob output capacitance (vcb = 30 vdc, ie = 0, f = 1.0 mhz) - 1.6 2.0 pf ftau current-gain bandwidth product (ic = 50 madc, vce = 15 vdc, f = 200 mhz) 800 1000 - mhz
mrf3866, r1, r2 mrf3866g, r1, r2 advanced power technology reserves the right to change, wi thout notice, the specifications and information contained herein visit our website at www.advancedpower.com or contact our factory direct. rev a 9/2005 functional value symbol test conditions min. typ. max. unit g u max maximum unilateral gain ic = 50 madc, vce = 15 vdc, f = 300 mhz - 15 - db mag maximum available gain ic = 50 madc, vce = 15 vdc, f = 300 mhz - 17 - db |s 21 | 2 insertion gain ic = 50 madc, vce = 15 vdc, f = 300 mhz 11.5 12.5 - db g pe amplifier power gain (v cc = 28 vdc; p out = 1 w; f = 400 mhz) 10 db h collector efficiency (v cc = 28 vdc; p out = 1 w; f = 400 mhz) 45 % table 1. common emitter s-parameters, @ vce = 15 v, ic = 50 ma f s11 s21 s12 s22 (mhz) |s11| e f |s21| e f |s12| e f |s22| e f 100 .632 -164 12.94 93 .018 53 .315 -27 300 .683 -179 4.33 75 .039 61 .307 -29 500 .710 171 2.57 62 .056 61 .346 -43 700 .717 162 1.82 51 .071 62 .393 -58 1000 .715 158 1.24 36 .092 65 .455 -72
mrf3866, r1, r2 mrf3866g, r1, r2 advanced power technology reserves the right to change, wi thout notice, the specifications and information contained herein visit our website at www.advancedpower.com or contact our factory direct. rev a 9/2005 efficiency (%) gpe freq (mhz) freq (mhz) gu max (db) ic max (ma) package device ic max (ma) rf (low power pa / general purpose) selection guide ma cro x mrf559 npn 870 0.5 6.5 70 7.5 16 150 ma cro x mrf559 npn 870 0.5 9.5 65 12.5 16 150 so-8 mrf8372,r1,r2 npn 870 0.75 8 55 12.5 16 200 power ma cro mrf557 npn 870 1.5 8 55 12.5 16 400 power ma cro mrf557t npn 870 1.5 8 55 12.5 16 400 ma cro x mrf559 npn 512 0.5 10 65 7.5 16 150 ma cro x mrf559 npn 512 0.5 13 60 12.5 16 150 to- 39 2n3866a npn 400 1 10 45 28 30 400 so-8 mrf3866, r1, r2 npn 400 1 10 45 28 30 400 power ma cro mrf555 npn 470 1.5 11 50 12.5 16 400 power ma cro mrf555t npn 470 1.5 11 50 12.5 16 400 so-8 mrf4427, r2 npn 175 0.15 18 60 12 20 400 to-39 2n4427 npn 175 1 10 50 12 20 400 power macro mrf553 npn 175 1.5 11.5 60 12.5 16 500 power macro mrf553t npn 175 1.5 11.5 50 12.5 16 500 to-39 mrf607 npn 175 1.75 11.5 50 12.5 16 330 to-39 2n6255 npn 175 3 7.8 50 12.5 18 1000 to-72 2n5179 npn 200 20 6 12 50 pout (watts) gpe (db) gpe vcc bvceo type package device type nf (db) nf ic (ma) nf vce gn (db) ftau (mhz) ccb(pf) bvceo to-39 2n5109 npn 200 3 10 15 12 1200 3.5 20 400 to-39 mrf5943c npn 200 3.4 30 15 11.4 1000 30 400 so-8 mrf5943, r1, r2 npn 200 3.4 30 15 15 1300 30 400 to-72 2n5179 npn 200 4.5 1.5 6 17 900 1 12 50 to-72 2n2857 npn 300 5.5 50 6 13 1600 1 15 40 to- 39 mrf5 17 npn 30 0 7 .5 50 15 5.5 4600 3 25 150 to- 72 mrf9 04 npn 45 0 1 .5 5 6 11 4000 1 15 30 to-72 2n6304 npn 450 5 2 5 14 1400 1 15 50 macro t bfr91 npn 500 1.9 2 5 11 16.5 5000 1 12 35 macro t bfr96 npn 500 2 10 10 14.5 500 2.6 15 100 so-8 mrf5812, r1, r2 npn 500 2 50 10 15.5 17.8 5000 15 200 macro x mrf581a npn 500 2 50 10 14 15 5000 15 200 macro bfr90 npn 500 2.4 2 10 15 18 5000 1 15 30 to-72 bfy90 npn 500 2.5 2 5 20 1300 15 50 to- 72 mrf9 14 npn 50 0 2 .5 5 10 15 4500 12 40 macro x mrf581 npn 500 2.5 50 10 15 17.8 5000 16 200 to-39 mrf586 npn 500 3 90 15 11 14.5 4500 2.2 17 200 macro x mrf951 npn 1000 1.3 5 6 14 17 8000 0.45 10 100 ma cro x mrf5 71 npn 1000 1 .5 10 6 1 0 8000 1 10 70 macro t bfr91 npn 1000 2.5 2 5 8 11 5000 1 12 35 macro t bfr90 npn 1000 3 2 10 10 12.5 5000 1 15 30 to-39 mrf545 pnp 14 1400 2 70 400 to-39 mrf544 npn 13.5 1500 70 400 rf (lna / general purpose) selection guide 2 3 4 1 2 3 4 1 85 macro x power macro macro t so-8 rf low power pa, lna, and general purpose discrete selector guide low cost rf plastic package options
mrf3866, r1, r2 mrf3866g, r1, r2 advanced power technology reserves the right to change, wi thout notice, the specifications and information contained herein visit our website at www.advancedpower.com or contact our factory direct. rev a 9/2005 1. 4. 8. 5. pin 1. emitter 2. collector 3. collector 4. emitter 5. emitter 6. base 7. base 8. emitter
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